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标题:光耦乱弹(中)(ZT)
2008-08-09 13:26:05
大部分的光耦都是低速光耦 最著名的当然是TLP521-1;
PC817、814等也是经常使用的光耦; 高速光耦最著名也最便宜的是6N137
在通讯电路设计中,光耦是经常见到的; TLP521-1可以用到9600~19200;
限流电阻是1K;上拉电阻是1K; 6N137可以到10M;但是6N137需要按照datasheet来接它的外部电路才能达到10M的速度; 6N137的内部和典型电路
6N137的内部结构
![]() 6N137的测试电路 6N137的使用注意点:
1、高速光耦的驱动LED的电流要求比较大,LED的压降也比较大,在5V情况下,限流电阻我选择的是680欧姆;
2、上拉电阻需要调整到1K或者更小才能达到10M的速度;(印象记忆中) 还有一种特殊的光耦,内部有2个发光管
![]() 常见之高速光藕型号
常见之高速光藕型号[zt]
经查大量资料后,总结出目前市场上常见之高速光藕型号供大家选择: 100K bit/S: 6N138、6N139、PS8703 1M bit/S: 6N135、6N136、CNW135、CNW136、PS8601、PS8602、PS8701、PS9613、PS9713、CNW4502、HCPL-2503、HCPL-4502、HCPL-2530(双路)、HCPL-2531(双路) 10M bit/S: 6N137、PS9614、PS9714、PS9611、PS9715、HCPL-2601、HCPL-2611、HCPL-2630(双路)、HCPL-2631(双路) 另外,台湾COSMO公司的KP7010在RL选值为300欧左右时,我根据其数据手册所载数值计算,速率可达100Kbit/S,且为6脚封装,比同级的6N138、6N139小巧,价格也较低。 CTR的定义
光耦合器的增益被称为晶体管输出器件的电流传输比 (CTR),其定义是光电晶体管集电极电流与LED正向电流的比率(ICE/IF)。光电晶体管集电极电流与VCE有关,即集电极和发射极之间的电压
MICROCOUPLER为高温应用提升功耗性能
![]() 图1功耗的计算图1所示为MFP封装与Microcoupler在工作温度范围内CTR性能的比较。Microcoupler在100℃时的标准化CTR下降率约为20%,而MFP封装则为50%。较小的热体积和较高效率的AlGaAs Ired材料是Microcoupler获得较佳CTR稳定性的原因。由于该产品在一定温度范围内展现较高的稳定性,因此更易于在高温范围内进行设计。 根据图1的数据,当温度从0℃上升到100℃时,FODB100的CTR从+8%下降到 20%。最小CTR(I_{F}=1mA)为100%。当工作10年后,CTR一般会下降20%。现在,我们可以算出上述条件下最小的CTR: ![]() 最小 (CTR在100℃)=100%x0.80x0.80=64% R_{1}=\frac{(V_{CC}-V_{F})}{I_{F}} →(1) I_{F}=\frac{I_{CE}}{CTR} →(2) 首先确定所需的I_{CE},然后可以确定I_{F}。从以上计算可知CTR为64%。假设所需I_{CE}为1mA。 ![]() 从公式 2可得:I_{F}=\frac{1mA}{0.64}=1.56mA 从表2可知在100℃当V_{F}= 1.1 V时,V_{CC}= 5V; 功耗=(V_{F} I_{F})+(V_{CE} I_{CE}) (导通状态) =(1.1V 1.56mA)+(0.4V 1mA)=2.117mA ![]() 根据图1的数据,当温度从0℃上升到100℃时,MFP封装的CTR从+9%下降到 -50%。最小CTR (I_{F}=5mA)为100%。假设LED电流为(I_{F}=1mA),CTR增益为100%,那么I_{CE}等于1mA。当工作10年后,CTR一般会下降20%。现在,我们可以算出上述条件下最小的CTR: 最小 (CTR在100℃) =100%x0.50x0.80=40% 首先确定所需的I_{CE},然后可以确定I_{F}。从以上计算可知CTR为40%。假设所需I_{CE}为1mA。 ![]() 从公式 2可得:I_{F}=\frac{1mA}{0.4}=2.5mA 从表4可知在100℃当V_{F}= 1.15 V时,V_{CC}= 5V; 功耗=(V_{F} I_{F})+(V_{CE} I_{CE}) (导通状态) =(1.15V 2.5mA)+(0.4V 1mA)=3.28mA 热阻 表5列出了两种不同封装在同样电气特性下的热性能。封装密度和封装材料对于封装从结点到周围的散热能力有很大影响。由于Microcoupler 的封装密度较小,因此具有比MFP封装更多的从裸片结点散热的路径。 ![]() 计算光耦合器裸片温度相对于周围温度的上升: T_{J}=P_{DEVICE\phantom{8}POWER} _{JA}+T_{A} Microcoupler Tj (发射器) = 100.44℃ Tj (检测器) = 100.05℃ MFP Tj (发射器) = 103.96℃ Tj (检测器) = 100.06℃ 结论 在100℃的温度环境维持相同增益的前提下,Microcoupler的功耗比标准MFP封装低约35%。Microcoupler封装的高效率LED和较佳的热性能是在高温应用下获得低功耗的主因。这些优点为设计人员的高温应用提供了理想的低功耗解决方案。 可控硅型光耦 还有一种光耦是可控硅型光耦。
例如:moc3063、IL420; 它们的主要指标是负载能力; 例如:moc3063的负载能力是100mA;IL420是300mA; 上传IL420的pdf文档
上传IL420的pdf文档
FEATURES ? High Input Sensitivity IFT=2 mA ? Blocking Voltage, 600 V ? 300 mA On-State Current ? High Static dv/dt 10,000 V/ms ? Inverse Parallel SCRs Provide Commutatingdv/dt >2K V/ms ? Very Low Leakage <10mA ? Isolation Test Voltage from Double Molded Package 5300 VAC RMS ? Small 6-Pin DIP Package ? Underwriters Lab File #E52744 ? VDE 0884 Available with Option 1 Maximum Ratings Emitter Reverse Voltage ................................................ 6 V Forward Current ........................................... 60 mA Surge Current..................................................2.5 A Power Dissipation.......................................100 mW Derate from 25°C ................................1.33 mW/°C Thermal Resistance..................................750°C/W Detector Peak Off-State Voltage ...................................600 V Peak Reverse Voltage ....................................600 V RMS On-State Current.................................300 mA Single Cycle Surge............................................ 3 A Total Power Dissipation ..............................500 mW Derate from 25°C ..................................6.6 mW/°C Thermal Resistance...................................150°C/W Package Storage Temperature................... –55°C to +150°C Operating Temperature ............... –55°C to +100°C Lead Soldering Temperature.............. 260°C/5 sec. Isolation Test Voltage.........................5300 VACRMS DESCRIPTION The IL420 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The IL420 uses two discrete SCRs resulting in a commutating dV/dt of greater than 10KV/ms. The use of a proprietary dv/dt clamp results in a static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The 600 V blocking voltage permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL420 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances. 可控硅型光耦
还有一种光耦是可控硅型光耦。
例如:moc3063、IL420; 它们的主要指标是负载能力; 例如:moc3063的负载能力是100mA;IL420是300mA; 上传IL420的pdf文档
上传IL420的pdf文档
FEATURES ? High Input Sensitivity IFT=2 mA ? Blocking Voltage, 600 V ? 300 mA On-State Current ? High Static dv/dt 10,000 V/ms ? Inverse Parallel SCRs Provide Commutatingdv/dt >2K V/ms ? Very Low Leakage <10mA ? Isolation Test Voltage from Double Molded Package 5300 VAC RMS ? Small 6-Pin DIP Package ? Underwriters Lab File #E52744 ? VDE 0884 Available with Option 1 Maximum Ratings Emitter Reverse Voltage ................................................ 6 V Forward Current ........................................... 60 mA Surge Current..................................................2.5 A Power Dissipation.......................................100 mW Derate from 25°C ................................1.33 mW/°C Thermal Resistance..................................750°C/W Detector Peak Off-State Voltage ...................................600 V Peak Reverse Voltage ....................................600 V RMS On-State Current.................................300 mA Single Cycle Surge............................................ 3 A Total Power Dissipation ..............................500 mW Derate from 25°C ..................................6.6 mW/°C Thermal Resistance...................................150°C/W Package Storage Temperature................... –55°C to +150°C Operating Temperature ............... –55°C to +100°C Lead Soldering Temperature.............. 260°C/5 sec. Isolation Test Voltage.........................5300 VACRMS DESCRIPTION The IL420 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The IL420 uses two discrete SCRs resulting in a commutating dV/dt of greater than 10KV/ms. The use of a proprietary dv/dt clamp results in a static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver. The 600 V blocking voltage permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL420 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances. 光耦的部分型号
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网友评论:
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